? 2004 ixys all rights reserved 1 - 2 dsei 12-06a 417 ixys reserves the right to change limits, test conditions and dimensions symbol conditions maximum ratings i frms t vj = t vjm 25 a i favm t c = 100c; rectangular, d = 0.5 14 a i frm t p < 10 s; rep. rating, pulse width limited by t vjm 150 a i fsm t vj = 45c; t = 10 ms (50 hz), sine 100 a t = 8.3 ms (60 hz), sine 110 a t vj = 150c; t = 10 ms (50 hz), sine 85 a t = 8.3 ms (60 hz), sine 95 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 50 a 2 s t = 8.3 ms (60 hz), sine 50 a 2 s t vj = 150c; t = 10 ms (50 hz), sine 36 a 2 s t = 8.3 ms (60 hz), sine 37 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+150 c p tot t c = 25c 62 w m d mounting torque 0.4...0.6 nm weight 2g features international standard package jedec to-220 ac planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour epoxy meets ul 94v-0 applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) a = anode, c = cathode to-220 ac c c a v rrm = 600 v i favm = 14 a t rr = 35 ns ac v rsm v rrm type v v 640 600 dsei 12-06a i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 symbol conditions characteristic values typ. max. i r t vj = 25c; v r = v rrm 50 a t vj = 25c; v r = 0.8 v rrm 25 a t vj = 125c; v r = 0.8 v rrm 3ma v f i f = 16 a; t vj = 150c 1.5 v t vj = 25c 1.7 v v t0 for power-loss calculations only 1.12 v r t t vj = t vjm 23.2 m ? r thjc 2 k/w r thch 0.5 k/w r thja 60 k/w t rr i f = 1 a; -di/dt = 50 a/s; v r = 30 v; t vj = 25c 35 50 ns i rm v r = 350 v; i f = 12 a; -di f /dt = 100 a/s 4 4.4 a l 0.05 h; t vj = 100c
? 2004 ixys all rights reserved 2 - 2 dsei 12-06a 417 ixys reserves the right to change limits, test conditions and dimensions fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. dimensions dim. millimeter inches min. max. min. max. a 4..32 4.83 0.170 0.190 b 0.64 1.02 0.025 0.040 b1 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 2.54 bsc 0.100 bsc f 1.14 1.40 0.045 0.055 h1 5.85 6.85 0.230 0.270 j1 2.29 2.79 0.090 0.110 k 0 0.38 0 0.015 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.53 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 note: this drawing will meet all dimensions requirement of jedec outline to-220 ab
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